Teimuraz Pagava, Levan Chkhartishvili, Manana Beridze, Magda Metskhvarishvili, Iamze Kalandadze, Darejan Khocholava, Nona Esiava, Maia Kevkhishvili, Marine Matcharashvili


The aim of research is studying the mechanism of n–p inversion of the conduction type of deformed silicon crystals in the course of their thermal treatment. Initially, almost non-dislocation zone-melted phosphorus-doped n-Si single crystals with electron concentration of 2×1014 cm–3 were studied. Uniaxial compression at temperature of 700 °С and pressure of 25 MPa increased the dislocation density to 108 cm–2. After long (within 30 min) cooling of the deformed crystals to room temperature, an n–p inversion of the conduction type occurred. The effect is explained by the formation of phosphorus–divacancy complexes PV2 in the defective atmosphere of dislocations, which are acceptor centers with energy level of Ev+0.34 eV. The found out n–p inversion mechanism differs from the standard one for plastically deformed n-type semiconductors with a diamond-like crystalline structure, which consists in the formation of acceptor centers along edge dislocations.


conduction type inversion; plastic deformation; thermal treatment; silicon

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DOI: http://dx.doi.org/10.21303/2461-4262.2019.00938


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