SPECIAL MECHANISM OF CONDUCTION TYPE INVERSION IN PLASTICALLY DEFORMED n-Si

Teimuraz Pagava, Levan Chkhartishvili, Manana Beridze, Magda Metskhvarishvili, Iamze Kalandadze, Darejan Khocholava, Nona Esiava, Maia Kevkhishvili, Marine Matcharashvili

Abstract


The aim of research is studying the mechanism of n–p inversion of the conduction type of deformed silicon crystals in the course of their thermal treatment. Initially, almost non-dislocation zone-melted phosphorus-doped n-Si single crystals with electron concentration of 2×1014 cm–3 were studied. Uniaxial compression at temperature of 700 °С and pressure of 25 MPa increased the dislocation density to 108 cm–2. After long (within 30 min) cooling of the deformed crystals to room temperature, an n–p inversion of the conduction type occurred. The effect is explained by the formation of phosphorus–divacancy complexes PV2 in the defective atmosphere of dislocations, which are acceptor centers with energy level of Ev+0.34 eV. The found out n–p inversion mechanism differs from the standard one for plastically deformed n-type semiconductors with a diamond-like crystalline structure, which consists in the formation of acceptor centers along edge dislocations.


Keywords


conduction type inversion; plastic deformation; thermal treatment; silicon

Full Text:

PDF

References


Dvurechenskij, A. V., Remesnik, V. G., Ryazantsev, I. A., Talipov, N. Kh. (1993). Conduction type inversion in plasma-treated CdxHg1–xTe layers. Semiconductors, 27 (1), 168–171.

Ibragimova, M. I., Baryshev, N. S., Zhikharev, V. A., Khaybullin, I. B. (1995). Recombination characteristics of ion-implanted (I, III and VIII groups) and thermally annealed CdxHg1–xTe crystals. Semiconductors, 29 (10), 1755–1763.

Grekov, Y. B., Shlyakhov, T. A., Semikolenova, N. A. (1997). Inversion of the conduction type of epitaxial films of PbSnTe solid solutions under the influence of laser irradiation at subthreshold power. Semiconductors, 31 (8), 844–846. doi: https://doi.org/10.1134/1.1187239

Vaksman, Y. F., Nitsuk, Y. A., Purtov, Y. N., Shapkin, P. V. (2003). Inversion of conductivity type in ZnSe single crystals obtained by the method of free growth. Semiconductors, 37 (2), 145–147. doi: https://doi.org/10.1134/1.1548654

Kosyachenko, L. A., Maslyanchuk, O. L., Melnychuk, S. V., Sklyarchuk, V. M., Sklyarchuk, O. V., Aoki, T. (2010). Features of the mechanism of electrical conductivity of semiinsulating CdTe crystals. Semiconductors, 44 (6), 699–704. doi: https://doi.org/10.1134/s1063782610060023

Samsonenko, S. N., Samsonenko, N. D., Timchenko, V. I. (2010). Dislocation electrical conductivity of plastically deformed natural diamonds. Semiconductors, 44 (9), 1140–1144. doi: https://doi.org/10.1134/s1063782610090058

Shikina, Yu. V., Shikin, V. B. (1994). Inversion of conduction type in plastically deformed n-semiconductors. Semiconductors, 28 (4), 675–680.

Konozenko, I. D., Semenyuk, A. K., Khivrich, V. I. (1969). Radiation Defects Created by Co60 γ-Rays in p- and n-Type Si of High Purity. Physica Status Solidi (b), 35 (2), 1043–1052. doi: https://doi.org/10.1002/pssb.19690350257

Milevskii, L. S., Tkacheva, T. M., Pagava, T. A. (1975). Trapping and anomalous scattering of majority carriers by interacting centers in plastically deformed n-type silicon. Journal of Experimental and Theoretical Physics, 42 (6), 1084–1088.

Pagava, T. A. (2006). Effect of irradiation temperature on the efficiency of introduction of multivacancy defects into n-Si crystals. Semiconductors, 40 (8), 890–892. doi: https://doi.org/10.1134/s1063782606080057

Vavilov, V. S., Kiselev, V. F., Mukashev, B. F. (1990). Defekty v kremnii i na ego poverhnosti. Moscow: Nauka, 216.

Lukjanitsa, V. V. (2003). Energy levels of vacancies and interstitial atoms in the band gap of silicon. Semiconductors, 37 (4), 404–413. doi: https://doi.org/10.1134/1.1568459

Luganov, P. F., Lukashevich, T. A. (1988). Efficiency of formation of phosphorus-containing complexes by electron- and -irradiating of silicon. Semiconductors, 22 (11), 2071–2073.

Emtsev, V. V., Mashovets, T. V. (1981). Primesi i tochechnye defekty v poluprovodnikah. Moscow: Radio i svyaz', 248.




DOI: http://dx.doi.org/10.21303/2461-4262.2019.00938

Refbacks

  • There are currently no refbacks.


Bookmark and Share


Copyright (c) 2019 Teimuraz Pagava, Levan Chkhartishvili, Manana Beridze, Magda Metskhvarishvili, Iamze Kalandadze, Darejan Khocholava, Nona Esiava, Maia Kevkhishvili, Marine Matcharashvili

Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.

ISSN 2461-4262 (Online), ISSN 2461-4254 (Print)